In contrast, increasing the physical component enables the impact of crystal orientation to be minimized to achieve a circular nanorod profile with inclined sidewalls. A dominant chemical component is found to have a significant impact on the morphology, being impacted by the polarity of the planes. The impact of gas chemistry, pressure, temperature, radio-frequency (RF) and ICP power and time are explored. In this paper, we investigate the formation and morphology of semi-polar ( 11 2 ¯ 2) and non-polar ( 11 2 ¯ 0) GaN nanorods using inductively coupled plasma (ICP) etching. However, very limited studies of nanotexturing via dry etching have been performed, in comparison to wet etching. The formation of gallium nitride (GaN) semi-polar and non-polar nanostructures is of importance for improving light extraction/absorption of optoelectronic devices, creating optical resonant cavities or reducing the defect density.
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